移动电源单芯片 Power SOC+

The ETA9640 is a fully integrated power management unit specifically designed for Power Bank, Mobile Charger, Backup Battery Charger applications. It consists of a high efficiency synchronous step-up boost converter and a linear battery charger. The boost can provide up to 1A output current at 5V of • 2in 1: A Synchronous boost plus A Charger\n\n• Short-circuit Protection\n\n• 5W Output Power for the Boost\n\n• Boost Output to Input Reversed Current Protection\n\n• Up to 1A Charging\n\n• Up to 96% Efficiency during Boosting\n\n• 100μA No load Iq\n\n• Programmable Charging Current;

5V/1A Synchronous Boost with 1A Linear Charger for Power Bank

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丝印代码：YWWPL；5V/1A Synchronous Boost with 1A Linear Charger for Power Bank

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P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID= -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A FEATURES ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

Advanced Power MOSFET

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