Ultra Low RON OVP with FLAG

ET9640 can disconnect the systems from its output pin(OUT) in case wrong input operating conditions are detected. The system is positive over-voltage protected up to 28V. The internal over-voltage threshold(OVLO) is 13.75V. ET9640 has internal Thermal-Shutdown Protection and Input Voltage detection. • 7A Continuous Current Capability\n\n• Typical RON:8mΩN-Channel MOSFET\n\n• VIN Operating Range: 2.5V to 28V\n\n• InternalOver-voltage Lockout:13.75V\n\n• Over-voltage-ProtectionResponse Time：80ns(TYP)\n\n• Startup DebounceTime:20ms(TYP)\n\n• InternalThermal-Shutdown Protection\n\n• Surge immunity ;

Ultra Low RON OVP with FLAG

ET9640A can disconnect the systems from its output pin(OUT) in case wrong input operating conditions are detected. The system is positive over-voltage protected up to 28V. The internal over-voltage threshold(OVLO) is 13.75V. ET9640A has internal Thermal-Shutdown Protection and Input Voltage detectio 7A Continuous Current Capability\n\nTypical RON:9mΩN-Channel MOSFET\n\nVINOperating Range: 2.5V to 28V\n\nInternalOver-voltage Lockout:13.75V\n\nOver-voltage-ProtectionResponse Time：80ns(TYP)\n\nStartup DebounceTime:20ms(TYP)\n\nInternalThermal-Shutdown Protection\n\nSurge immunity to±100V\n\nESD Pr;

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID= -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A FEATURES ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

Advanced Power MOSFET

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