4-bit bidirectional level translator

The ET5014 is a 4-bit bidirectional level translator in which the input and output ports are switched automatically without direction control. The data path of each channel can be either from I/O_VLn to I/O_VCCn or from I/O_VCCn to I/O_VLn. All of the I/O ports are designed to track two different po • Wide VCC, VLOperating Range: 1.2V to 5.0V\n\n• VLand VCCare Independent\n\n• VLmay be Greater than, Equal to, or Less than VCC\n\n• High 100 pF Capacitive Drive Capability\n\n• High−Speed with 120 Mbps Guaranteed Date Rate for VCC, VL> 2.3V\n\n• Low Bit−to−Bit Skew\n\n• Over-voltage Tolerant Enabl;

4 bit 100 Mbps Level Translator

The ET5014AM is a 4-bit bidirectional level translator in which the input and output ports are switched automatically without direction control. The data path of each channel can be either from I/O_VLn to I/O_VCCn or from I/O_VCCn to I/O_VLn. All of the I/O ports are designed to track two different • Wide VCC, VL Operating Range: 1.1V to 5.0V\n\n• VL and VCC are Independent\n\n• VL may be Greater than, Equal to, or Less than VCC\n\n• High 100 pF Capacitive Drive Capability\n\n• High−Speed with 100 Mbps Guaranteed Date Rate for VCC, VL > 1.8V\n\n• Low Bit−to−Bit Skew\n\n• Over-voltage Tolerant ;

4-bit bidirectional level translator

The ET5014L is a 4-bit bidirectional level translator in which the input and output ports are switched automatically without direction control. The data path of each channel can be either from I/O_VLn to I/O_VCCn or from I/O_VCCn to I/O_VLn. All of the I/O ports are designed to track two different p • Wide VCC, VLOperating Range: 1.08V to 5.0V\n\n• VLand VCCare Independent\n\n• VLmay be Greater than, Equal to, or Less than VCC\n\n• High 50pF Capacitive Drive Capability\n\n• High−Speed with 100 Mbps Guaranteed Date Rate for VCC, VL> 1.8V\n\n• Low Bit−to−Bit Skew\n\n• Over-voltage Tolerant Enable;

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally

Dot Matrix LED

■ General Description Sharps dot matrix LEDs can express characters and symbols on a display. (Number of dots: 5✕7, 8✕8, 16✕16). We can supply wide color variation; high-luminosity red T series, yellow-green E series, sunset orange S series, dichromatic emission, etc.

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package

Zener Diode, 300mW 짹5 Tolerance

Features: Zener Voltage 3.3V to 24V SOT–23 Type Surface Mount Package Absolute Maximum Ratings: Maximim Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Maximim Repetitive Peak Working Current, IZRM . . . . . . . . . .. . . . . . . .

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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