NPN DARLINGTON POWER MODULE

LOW INTERNAL PARASITIC INDUCTANCE\nEASY TO MOUNT\nHIGH CURRENT POWER BIPOLAR MODULE\nSPECIFIED ACCIDENTAL OVERLOAD AREAS\nVERY LOW R\nth JUNCTION CASE\nFULLY INSULATED PACKAGE (UL COMPLIANT)\nULTRAFAST FREEWHEELING DIODE;

NPN DARLINGTON POWER MODULE

文件：392.54 Kbytes Page：8 Pages

NPN DARLINGTON POWER MODULE

文件：115.94 Kbytes Page：8 Pages

封装/外壳：SOT-227-4，miniBLOC 包装：散装 描述：TRANS NPN DARL 300V 100A ISOTOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN DARLINGTON POWER MODULE

文件：392.54 Kbytes Page：8 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh