MBRB3030CT价格
参考价格：￥7.9419
型号：MBRB3030CTLG 品牌：ON 备注：这里有MBRB3030CT多少钱，2026年最近7天走势，今日出价，今日竞价，MBRB3030CT批发/采购报价，MBRB3030CT行情走势销售排行榜，MBRB3030CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRB3030CT | SWITCHMODE??Power Rectifier SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh | MOTOROLA 摩托罗拉 |   | |
MBRB3030CT | SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack | ONSEMI 安森美半导体 | | |
MBRB3030CT | Schottky Barrier Rectifier FEATURES • Schottky barrier chip • Low Power Loss,High Efficiency • Guard ring for transient protection • High Operating Junction Temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For use in high frequency | ISC 无锡固电 | | |
MBRB3030CT | SCHOTTKY BARRIER RECTIFIERS FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | DSK | | |
MBRB3030CT | 30 Amp Schottky Barrier Rectifier 30 to 60 Volts Features • Guard ring for transient protection • Low Forward Voltage Drop • High Current Capability, High Efficiency • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Marking : type number • Lead Free Fin | MCC | | |
MBRB3030CT | 30 Amp Schottky Barrier Rectifier 30 to 60 Volts 文件：257.149 Kbytes Page：3 Pages | MCC | | |
MBRB3030CT | Schottky Barrier Rectifiers | ZBMCC 美林电子 | | |
MBRB3030CT | 30A,30V,Schottky Barrier Rectifiers | GALAXY 银河微电 | | |
MBRB3030CT | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 30V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | |
MBRB3030CT | 肖特基二极管 | MCC | | |
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Dual Diode Construction, May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 125°C Operating Junct | ONSEMI 安森美半导体 | | ||
SCHOTTKY RECTIFIER Description/Features This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters | IRF | | ||
Schottky Barrier Rectifier FEATURES · Low Forward Voltage Drop · High Frequency Operation · Low Power Losses, High Efficiency APPLICATIONS · Switching Power Supplies · Converters · Freewheeling Diodes | ISC 无锡固电 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Dual Diode Construction, May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 125C Operating Junct | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Dual Diode Construction, May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 125°C Operating Junct | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/Features This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters | IRF | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SCHOTTKY RECTIFIER Description/Features This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters | IRF | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewhe | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack | ONSEMI 安森美半导体 | | ||
SWITCHMODE Power Rectifier SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured − Not Sheared • Pb−Free Pack | ONSEMI 安森美半导体 | | ||
30 Amp Schottky Barrier Rectifier 30 to 60 Volts 文件：257.149 Kbytes Page：3 Pages | MCC | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 30V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Schottky Rectifier, 2 x 15 A 文件：111.35 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE??Power Rectifier SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh | MOTOROLA 摩托罗拉 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | |
MBRB3030CT产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Configuration：
Common Cathode
- VRRM Min (V)：
30
- VF Max (V)：
0.67
- IRM Max (µA)：
600
- IO(rec) Max (A)：
30
- IFSM Max (A)：
200
- Package Type：
D2PAK-3/TO-263-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
25+23+ |
TO263 |
42136 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
D2-PAK |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
21+ |
TO-263-2 |
8080 |
只做原装,质量保证 |
|||
ON |
25+ |
D2PAK3 |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
MOT |
25+ |
TO263 |
2987 |
绝对全新原装现货供应! |
|||
ON/安森美 |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
|||
ON-SEMI |
25+ |
57 |
公司优势库存 热卖中! |
||||
ON |
12+ |
TO-263 |
27 |
全新 发货1-2天 |
|||
24+ |
3000 |
公司现货 |
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2019-8-6
DdatasheetPDF页码索引
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