丝印代码：1R2B；ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

Data-Line Surge and ESD Protection Diode Array

文件：548.64 Kbytes Page：17 Pages

Data-Line Surge and ESD Protection Diode Array

文件：1.15345 Mbytes Page：21 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT） 描述：TVS DIODE 3.6VWM 6.5VC SOT23-5 电路保护 TVS - 二极管

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

ESDS31x Data-Line Surge and ESD Protection Diode Array

1 Features • IEC 61000-4-2 ESD protection: – ±30kV Contact Discharge – ±30kV Air Gap Discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 25A (8/20μs) • IO capacitance: – 4.5pF (typical) • DC breakdown voltage: 5.5V (minimum) • Ultra low leakage c

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch