丝印代码：1L8；ESD321 1-Channel 30 kV ESD Protection Diode with Low Capacitance (pF) in 0402 and SOD-523 Packages

1 Features • IEC 61000-4-2 Level 4 ESD protection – ±30-kV contact discharge – ±30-kV air gap discharge • IEC 61000-4-4 EFT protection – 80 A (5/50 ns) • IEC 61000-4-5 surge protection – 6 A (8/20 μs) • IO capacitance: 0.9 pF (typical) • DC breakdown voltage: 4.5 V (minimum) • Low leakag

ESD321 1-Channel 30kV ESD Protection Diode with Low Capacitance (1pF) in 0402 and SOD-523 Packages

1 Features • IEC 61000-4-2 Level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: 0.9pF (typical) • DC breakdown voltage: 4.5V (minimum) • Low leakage cur

ESD321 1-Channel 30kV ESD Protection Diode with Low Capacitance (1pF) in 0402 and SOD-523 Packages

1 Features • IEC 61000-4-2 Level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: 0.9pF (typical) • DC breakdown voltage: 4.5V (minimum) • Low leakage cur

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50 Min • 100

COPS Family Users Guide Table of Contents

文件：8.5059 Mbytes Page：79 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages

Low Power Single Op Amp

文件：237.25 Kbytes Page：9 Pages