耐硫化贴片电阻

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance:RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V)

注:在重负荷下连续使用(例如高负荷的应用温度/电流/电压的显著变化温度等)可能会导致本产品的下降即使在操作条件下(例如:工作温度/电流/电压等绝对最大额定参数。请设计适当的可靠性审查

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