小型高功率贴片电阻

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V)

P-Channel MOSFET

■ Features ● VDS (V) = -20 V ● ID = -3.0 A ● 1.5 V drive ● Low ON-resistance: RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)