功能：半 H 桥驱动器（外部 FET） 包装：盒 描述：BOARD DEV FOR EPC2106 开发板，套件，编程器 评估和演示板及套件

55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul