High Efficiency Heterojunction Power FET

• +37.5dBm TYPICAL OUTPUT POWER • 19.0dB TYPICAL POWER GAIN AT 2GHz • 0.4 X 7200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY • Idss SORTED IN 180

High Efficiency Heterojunction Power FET

• +37.5dBm TYPICAL OUTPUT POWER\n• 19.0dB TYPICAL POWER GAIN AT 2GHz\n• 0.4 X 7200 MICRON RECESSED\n   “MUSHROOM” GATE\n• Si3N4 PASSIVATION\n• ADVANCED EPITAXIAL\n    HETEROJUNCTION\n    PROFILE PROVIDES EXTRA HIGH POWER\n    EFFICIENCY, AND HIGH RELIABILITY\n• Idss SORTED IN 180mA PER BIN RANGE

Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • V

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies

NPN high-voltage transistors

DESCRIPTION NPN transistors in a SOT223 plastic package. PNP complement: BF723. FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages of colour television receivers • General purpose high voltage circuits.

Phase Control SCR (450-550 Amperes 2400 Volts)

Phase Control SCR 450-550 Amperes 2400 Volts Applications □ Power Supplies □ Battery Changers □ Motor Control □ VAR Generators

General Purpose Rectifier (600-1200 Amperes Average 4400 Volts)

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