High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET · +24.5dBm TYPICAL OUTPUT POWER · 11.0dB TYPICAL POWER GAIN FOR EPA040A AND 12.0dB FOR EPA040AV AT 18GHz · 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION · ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION The SD4011 is a gold metallized NPN silicon bipolar device optimized for Class A operation in TV Band IV/V. Suitable for a variety of other UHF linear applications, SD4011 is supplied in an industry-standard .280 stud package. ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ COMMO

HAS SERIES - 60 WATT

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HAS SERIES - 60 WATT

文件：177.19 Kbytes Page：3 Pages

HBD SERIES - DUAL OUTPUT, 60 WATT

文件：183.38 Kbytes Page：3 Pages