High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET FEATURES • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE • +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION • 7.0 dB POWER GAIN AT 12GHz • 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFIL

High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FETFEATURES\n• NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE\n• +25.5 dBm OUTPUT POWER AT 1dB COMPRESSION\n• 7.0 dB POWER GAIN AT 12GHz\n• 0.3 x 800 MICRON RECESSED “MUSHROOM” GATE\n• Si3N4 PASSIVATION\n• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVICES EXTRA HIG • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE\n• 7.0 dB POWER GAIN AT 12GHz\n• Si3N4 PASSIVATION\n• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVICES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY;

High Efficiency Heterojunction Power FET

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +22.0dBm TYPICAL OUTPUT POWER • 8.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RE

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +22.0dBm TYPICAL OUTPUT POWER • 8.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINE