UltraCMOS® High-speed FET and GaN Transistor Driver, 20 MHz

Features •TID = 100 krad(Si)•SEL Immune•High- and Low-side FET drivers•Dead-time control•Fast propagation delay, 9 ns•Tri-state enable mode•Sub-nanosecond rise and fall time•2 A / 4 A peak source/sink current•Bumped flip chip die Applications •dc–dc conversions •ac–dc conversions •Orbital P