RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP

Features • Low-noise : NF=1.5dB typ (f=2GHz) • High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) • Low-voltage operation • High gain : ⏐S21e⏐2=9.5dB typ (f=2GHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen f

UHF to S-Band Low-Noise Amplifier, OSC Applications

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RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Optocoupler with Phototransistor Output

Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infrared emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output fo

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

P-Channel Enhancement-Mode Vertical DMOS Power FETs Applications □ Motor controls □ Converters □ Amplifiers □ Switches □ Power supply circuits □ Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.)

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

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N-Channel Enhancement-Mode Vertical DMOS Power FETs???

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