RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP

RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : |S21e|2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ

VHF to UHF Wide-Band Low-Noise Amplifier Applications

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RF Transistor 10V, 70mA, fT=7GHz, NPN Single CP

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

GaAlAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

High Power 2 쨈 4 Antenna Switch MMIC

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DC Accurate, Clock-Tunable 5th Order Butterworth Lowpass Filter

文件：317.89 Kbytes Page：12 Pages

DC Accurate, Clock-Tunable 5th Order Butterworth Lowpass Filter

文件：317.89 Kbytes Page：12 Pages