位置：首页 > IC中文资料第3032页 > VTE1063
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VTE1063 | GaAlAs Infrared Emitting Diodes DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications. | PERKINELMER |   | |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime | POLYFET | | ||
High Power 2 쨈 4 Antenna Switch MMIC 文件：67.99 Kbytes Page：5 Pages | SONYSony Corporation 索尼 | | ||
DC Accurate, Clock-Tunable 5th Order Butterworth Lowpass Filter 文件：317.89 Kbytes Page：12 Pages | LINER 凌力尔特 | | ||
DC Accurate, Clock-Tunable 5th Order Butterworth Lowpass Filter 文件：317.89 Kbytes Page：12 Pages | LINER 凌力尔特 | |
VTE1063产品属性
- 类型
描述
- 型号
VTE1063
- 制造商
Excelitas Technologies Corporation
- 功能描述
IR EMITTER, 880NM, 4.78MM, TO-46, THD; Peak
- Wavelength
880nm; Forward Current
- If(AV)
100mA; Rise
- Time
1s; Fall Time
- tf
1s; Radiant
- Intensity
49mW/Sr; Viewing
- Angle
35; Forward Voltage VF
- Max
2.8V; Operating Temperature
- Min
-55C ;RoHS
- Compliant
Yes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Excelitas Technologies Sensors |
2022+ |
1 |
全新原装 货期两周 |
VTE1063规格书下载地址
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