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型号 功能描述 生产厂家 企业 LOGO 操作
ENA1055

Schottky Barrier Diode 30V, 1.0A Rectifier

30V, 1.0A Rectifier Features • Low switching noise. • Low reverse current (VR=16V, IR max=15μA). Applications • High frequency rectification (switching regulators, converters, and choppers).

SANYO

三洋

ENA1055

Schottky Barrier Diode 30V, 1.0A Rectifier

ONSEMI

安森美半导体

Integrated Circuit FM/AM IF Amp

Integrated Circuit FM/AM IF Amp

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

TRIQUINT

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

TRIQUINT

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages

ZETEX

ENA1055产品属性

  • 类型

    描述

  • 型号

    ENA1055

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    Schottky Barrier Diode 30V, 1.0A Rectifier

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