Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3

Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Application

nullBipolar Transistor 15V, 1A, Low VCE(sat) NPN Single MCPH3

Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single MCPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=300mΩ [IC=1A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Applicati

Bipolar Transistor -30V, -0.7A, Low VCE(sat) PNP Single MCPH3

Bipolar Transistor –30V, –0.7A, Low VCE(sat) PNP Single MCPH3 Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=580mΩ[IC=0.7A, IB=35mA] • Small ON-resistance (Ron) Applications • Low-frequency Amplifier, high-speed switching small moto

Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3

nullBipolar Transistor 15V, 1A, Low VCE(sat) NPN Single MCPH3

Low-Frequency General-Purpose Amplifier Applications

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Bipolar Transistor -30V, -0.7A, Low VCE(sat) PNP Single MCPH3

SWITCHMODE??Power Rectifier

. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Epoxy Meets UL94, VO at 1/

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices areintended foruse inswitched mode power supplies and high frequency circ

-5V INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR

DESCRIPTION The ST735 is a Bi-CMOS, inverting switch mode DC-DC regulator with internal Power MOSFETs that generates a fixed -5V output voltage from a 4V to 6.2V input voltage; is guaranteed an output current of 200mA for inputs greater than 4.5V. The quiescent current for this device is typicall

300kHz, -5V/ADJ INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR

DESCRIPTION The ST735S/ST735T is a Bi-CMOS, inverting switch mode DC-DC regulator with internal Power MOSFET that generates a fixed -5V (S version) or a negative adjustable (T version) output voltage from a 4V (3.5V for the 735T) to 6.2V input voltage (9V for the 735T); is guaranteed an output cu

300kHz, -5V/ADJ INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR

DESCRIPTION The ST735S/ST735T is a Bi-CMOS, inverting switch mode DC-DC regulator with internal Power MOSFET that generates a fixed -5V (S version) or a negative adjustable (T version) output voltage from a 4V (3.5V for the 735T) to 6.2V input voltage (9V for the 735T); is guaranteed an output cu