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MBR735价格
参考价格:¥2.7432
型号:MBR735 品牌:Fairchild 备注:这里有MBR735多少钱,2025年最近7天走势,今日出价,今日竞价,MBR735批发/采购报价,MBR735行情走势销售排行榜,MBR735报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR735 | 7.5 Ampere Schottky Barrier Rectifiers Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. | Fairchild 仙童半导体 | ||
MBR735 | SWITCHMODE??Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • Pb−Free Packages are Available* Applications • Power Supply − Output Rectification • Power Management • Instrumentation | ONSEMI 安森美半导体 | ||
MBR735 | Schottky Rectifier, 7.5 A FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitio | VishayVishay Siliconix 威世威世科技公司 | ||
MBR735 | 7.5A SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application • Lead-F | DIODES 美台半导体 | ||
MBR735 | SWITCHMODE??Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Epoxy Meets UL94, VO at 1/ | Motorola 摩托罗拉 | ||
MBR735 | 7.5 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR735 | 7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts Features • Halogen free available upon request by adding suffix -HF • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix | MCC | ||
MBR735 | 7.5Amp schottky barrier rectifier 20to60volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability | CHENYI 商朗电子 | ||
MBR735 | SCHOTTKY RECTIFIER Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low forward | GE | ||
MBR735 | SCHOTTKY RECTIFIER 7.5 Amp Description/ Features The MBRB7.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling | IRF | ||
MBR735 | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica | SIRECTIFIER 矽莱克电子 | ||
MBR735 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Cas | KERSEMI | ||
MBR735 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar | KERSEMI | ||
MBR735 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar | KERSEMI | ||
MBR735 | Plastic material used carries Underwriters Laboratory Classifications 94V-0 Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon rectifier, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, hi | KERSEMI | ||
MBR735 | Metal of siliconrectifier, majonty carrier conducton Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Cas | KERSEMI | ||
MBR735 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar | KERSEMI | ||
MBR735 | Metal of siliconrectifier, majonty carrier conducton Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar | KERSEMI | ||
MBR735 | Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 Features • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polar | KERSEMI | ||
MBR735 | SCHOTTKY BARRIER RECTIFIER DIODES PRV : 35~60 Volts Io : 7.5 Amperes FEATURES : * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Metal silicon junction, majority carrier conduction * Low power loss, high efficiency * Guardring for overvoltage protection * For use in low voltage, high fr | SYNSEMI | ||
MBR735 | SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This | SMC 桑德斯微电子 | ||
MBR735 | 15A SCHOTTKY RECTIFIERS 15A SCHOTTKY RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | ||
MBR735 | SCHOTTKY RECTIFIER Features 150℃ TJ operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device Al | SMCDIODE 桑德斯微电子 | ||
MBR735 | SCHOTTKY BARRIER RECTIFIER 文件:252.5 Kbytes Page:3 Pages | HORNBY 南通康比电子 | ||
MBR735 | 7.5A SCHOTTKY RECTIFIERS 文件:400.99 Kbytes Page:2 Pages | DIGITRON | ||
MBR735 | Schottky Power Rectifier, Switch-mode, Dual, 7.5 A, 35 V | ONSEMI 安森美半导体 | ||
MBR735 | High Tjm Low IRRM Schottky Barrier Diodes 文件:92.17 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR735 | Schottky Barrier Rectifier 文件:225.65 Kbytes Page:2 Pages | ISC 无锡固电 | ||
MBR735 | Schottky Barrier Rectifier 文件:239.28 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR735 | 7.5A, 35V, Schottky Rectifier | TSC 台湾半导体 | ||
MBR735 | 肖特基二极管 | MCC | ||
MBR735 | 7.5 AMPS. Schottky Barrier Rectifiers 文件:248.51 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR735 | 7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts 文件:113.37 Kbytes Page:3 Pages | MCC | ||
MBR735 | 7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts 文件:200.31 Kbytes Page:3 Pages | MCC | ||
MBR735 | 7.5 AMPS. Schottky Barrier Rectifiers 文件:656.26 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR735 | 7.5 AMPS. Schottky Barrier Rectifiers 文件:266.58 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR735 | 7.5A SCHOTTKY BARRIER RECTIFIER 文件:67.34 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MBR735 | 封装/外壳:TO-220-2 包装:卷带(TR) 描述:DIODE SCHOTTKY 35V 7.5A TO220-2 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
MBR735 | 封装/外壳:TO-220-2 包装:管件 描述:DIODE SCHOTTKY 35V 7.5A TO220AC 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
MBR735 | Schottky Barrier Rectifier 文件:156.67 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | ||
MBR735 | Schottky Barrier Rectifier 文件:64.72 Kbytes Page:3 Pages | VishayVishay Siliconix 威世威世科技公司 | ||
SWITCHMODE??Power Rectifiers Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • Pb−Free Packages are Available* Applications • Power Supply − Output Rectification • Power Management • Instrumentation | ONSEMI 安森美半导体 | |||
Schottky Rectifier, 7.5 A DESCRIPTION The MBR7..PbF Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, a | VishayVishay Siliconix 威世威世科技公司 | |||
SCHOTTKY RECTIFIER 7.5 Amp Description/ Features The MBRB7.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling | IRF | |||
SCHOTTKY RECTIFIER 7.5 Amp Description/ Features The MBRB7.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling | IRF | |||
SCHOTTKY RECTIFIER 7.5 Amp Description/ Features The MBRB7.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling | IRF | |||
SCHOTTKY RECTIFIER 7.5 Amp Description/ Features The MBRB7.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling | IRF | |||
SCHOTTKY RECTIFIER 7.5 Amp Description/ Features The MBRB7.. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling | IRF | |||
Schottky Barrier Rectifier 文件:493.32 Kbytes Page:5 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
7.5 AMPS. Schottky Barrier Rectifiers 文件:266.58 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
7.5 AMPS. Schottky Barrier Rectifiers 文件:656.26 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
7.5 AMPS. Schottky Barrier Rectifiers 文件:248.51 Kbytes Page:2 Pages | TSC 台湾半导体 | |||
7.5 AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency 文件:263.8 Kbytes Page:3 Pages | TSC 台湾半导体 | |||
Schottky Barrier Rectifier 文件:239.28 Kbytes Page:4 Pages | TSC 台湾半导体 | |||
Schottky Barrier Rectifier 文件:156.67 Kbytes Page:6 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Schottky Rectifier, 7.5 A 文件:153.45 Kbytes Page:7 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Schottky Rectifier, 7.5 A 文件:153.45 Kbytes Page:7 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Schottky Rectifier, 7.5 A 文件:153.45 Kbytes Page:7 Pages | VishayVishay Siliconix 威世威世科技公司 | |||
Glass to tantalum hermetic seal FEATURES • Terminations: standard tin/lead (SnPb), 100 tin (RoHS compliant) available • For - 55 °C to + 200 °C operation • All tantalum case • Glass to tantalum hermetic seal • Low ESR • High CV per unit volume • Extremely low leakage current • High permissible ripple cur | VishayVishay Siliconix 威世威世科技公司 | |||
RS-232 Interface 文件:707.7 Kbytes Page:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
MBR735产品属性
- 类型
描述
- 型号
MBR735
- 制造商
TSC
- 制造商全称
Taiwan Semiconductor Company, Ltd
- 功能描述
7.5 AMPS. Schottky Barrier Rectifiers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO220AC |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
GI |
25+ |
TO220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
GI |
96+ |
TO220-2 |
400 |
原装现货海量库存欢迎咨询 |
|||
仙童 |
06+ |
TO-220 |
8000 |
原装 |
|||
ONSEMI/安森美 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
FSC/ON |
23+ |
原包装原封 □□ |
2108 |
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存 |
|||
ONSemiconductor |
24+ |
NA |
3091 |
进口原装正品优势供应 |
|||
DIODES |
20+ |
TO220 |
32970 |
原装优势主营型号-可开原型号增税票 |
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MBR735规格书下载地址
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