位置：首页 > IC中文资料第679页 > EN29LV160AT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 |   | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast | EON 宜扬科技 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d | AMD 超威半导体 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d | AMD 超威半导体 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d | AMD 超威半导体 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d | AMD 超威半导体 | | ||
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory GENERAL DESCRIPTION The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d | AMD 超威半导体 | |
EN29LV160AT产品属性
- 类型
描述
- 型号
EN29LV160AT
- 制造商
EON SILICON SOLUTION INC
- 功能描述
EN29LV160A Series, 16 Mbit 70 NS 48 TSOP Top Boot Sector 3 V NOR Flash
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
25+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
|||
23+ |
5000 |
专注配单,只做原装进口现货 |
|||||
EON |
22+ |
TSSOP |
20000 |
公司只有原装 品质保证 |
|||
EON |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
EON |
26+ |
SOP8 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
CFEON |
2023+ |
BGA |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
EON/宜扬 |
24+ |
BGA |
21574 |
郑重承诺只做原装进口现货 |
|||
EON/宜扬 |
2450+ |
BGA |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EON |
24+ |
BGA |
5000 |
全新原装正品,现货销售 |
|||
EON |
24+ |
BGA |
65200 |
一级代理/放心采购 |
EN29LV160AT规格书下载地址
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EN29LV160AT数据表相关新闻
EN5311QI
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製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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