型号 功能描述 生产厂家 企业 LOGO 操作

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EON

宜扬科技

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d

AMD

超威半导体

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d

AMD

超威半导体

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d

AMD

超威半导体

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d

AMD

超威半导体

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29LV160D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This d

AMD

超威半导体

更新时间:2026-3-16 0:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
20+
TSOP49
2960
诚信交易大量库存现货
EON
2023+
TSOP48
6893
专注全新正品,优势现货供应
ESMT
24+
TSSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
EON
25+23+
TSSOP48
20703
绝对原装正品全新进口深圳现货
EON
25+
TSOP48
880000
明嘉莱只做原装正品现货
EON
21+
8080
只做原装,质量保证
EON
25+
TSOP48
3000
全新原装、诚信经营、公司现货销售
KANEMATSU
17+
TSOP
6200
100%原装正品现货
EON
26+
TSOP48
86720
全新原装正品价格最实惠 假一赔百
KANEMATSU
23+
TSOP
5000
原装正品,假一罚十

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