型号 功能描述 生产厂家 企业 LOGO 操作

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

4 Megabit (512K x 8-bit) Flash Memory

GENERAL DESCRIPTION The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040A featur

EON

宜扬科技

EN29F040A-70P产品属性

  • 类型

    描述

  • 型号

    EN29F040A-70P

  • 功能描述

    4 Megabit(512K x 8-bit) Flash Memory

更新时间:2026-1-5 18:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
原装EON
24+
DIP32
9000
只做原装正品现货 欢迎来电查询15919825718
EON
DIP32
68500
一级代理 原装正品假一罚十价格优势长期供货
EON
25+
DIP32
18000
原厂直接发货进口原装
EON
24+
DIP32
10
EON
05/06+
DIP
9968
全新原装100真实现货供应
EON
22+
DIP32
5000
进口原装!现货库存
EON
23+
DIP32
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
EON/宜扬
25+
DIP32
4
全新原装正品支持含税
EON
24+
DIP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
EON
2447
PLCC-32
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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