型号 功能描述 生产厂家&企业 LOGO 操作
EN25P10

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit, serial Flash memory, 50 MHz SPI bus interface

Description The M25P10-A is a 1 Mbit (128 Kbit x 8) serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4 sectors,

NUMONYX

numonyx

30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

文件:1.01593 Mbytes Page:3 Pages

THINKISEMI

思祁半导体

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

文件:1.01614 Mbytes Page:3 Pages

THINKISEMI

思祁半导体

MILITARY QUALITY REMOVABLE CONTACT, SUBMINIATURE-D CONNECTORS

文件:383.06 Kbytes Page:3 Pages

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EN25P10产品属性

  • 类型

    描述

  • 型号

    EN25P10

  • 制造商

    EON

  • 制造商全称

    Eon Silicon Solution Inc.

  • 功能描述

    1 Mbit Uniform Sector, Serial Flash Memory

更新时间:2025-8-8 12:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
09+
SOP8
784
原装现货
EON
24+
NA/
5050
原装现货,当天可交货,原型号开票
EON
23+
7300
专注配单,只做原装进口现货
EON
21+
791
原装现货假一赔十
EON
22+
SOP-8
1995
只做原装正品
EONSIL
21+
12588
SOP8
EON
23+
SOP-8
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
EON
23+24
SOP8
29650
原装正品优势渠道价格合理.可开13%增值税发票
EON
23+
7300
专注配单,只做原装进口现货
EON
23+
12800
##公司主营品牌长期供应100%原装现货可含税提供技术

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