型号 功能描述 生产厂家 企业 LOGO 操作
EN25P10

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

EN25P10

1 Mbit Uniform Sector, Serial Flash Memory

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

GENERAL DESCRIPTION The EN25P10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P10 is designed to allow

EON

宜扬科技

1 Mbit Uniform Sector, Serial Flash Memory

EON

宜扬科技

1 Mbit, serial Flash memory, 50 MHz SPI bus interface

Description The M25P10-A is a 1 Mbit (128 Kbit x 8) serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 4 sectors,

NUMONYX

30.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

文件:1.01593 Mbytes Page:3 Pages

THINKISEMI

思祁半导体

30.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

文件:1.01614 Mbytes Page:3 Pages

THINKISEMI

思祁半导体

MILITARY QUALITY REMOVABLE CONTACT, SUBMINIATURE-D CONNECTORS

文件:383.06 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

EN25P10产品属性

  • 类型

    描述

  • 型号

    EN25P10

  • 制造商

    EON

  • 制造商全称

    Eon Silicon Solution Inc.

  • 功能描述

    1 Mbit Uniform Sector, Serial Flash Memory

更新时间:2025-11-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EON
22+
SOP-8
100000
代理渠道/只做原装/可含税
EON
24+
NA/
5050
原装现货,当天可交货,原型号开票
EON
25+
SOP-8
54658
百分百原装现货 实单必成
XTW
24+
QFN
28410
绝对原厂支持只做自己现货优势
EON
22+
SOP-8
1995
只做原装正品
EONSIL
2016+
SOP-8
520
只做原装,假一罚十,公司可开17%增值税发票!
EON/宜扬
25+
SOP-8
2000
全新原装正品支持含税
EON
2223+
SOP-8
26800
只做原装正品假一赔十为客户做到零风险
EON
24+
SOP8
1800
只做原装正品现货 欢迎来电查询15919825718
EON
SOP8
68500
一级代理 原装正品假一罚十价格优势长期供货

EN25P10数据表相关新闻