位置：首页 > IC中文资料第10909页 > EN25B10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN25B10 | 1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 |   | |
EN25B10 | 1 Mbit Serial Flash Memory with Boot and Parameter Sectors | ESMTElite Semiconductor Memory Technology Inc. 晶豪科技晶豪科技股份有限公司 | | |
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
1 Mbit Serial Flash Memory with Boot and Parameter Sectors GENERAL DESCRIPTION The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. FEATURES • Single power supply operatio | EON 宜扬科技 | | ||
Pulse transformers designed for Semikron 文件：662 Kbytes Page：6 Pages | PREMO 普莱默 | | ||
Pulse Transformers Range of preferred types 文件：188.74 Kbytes Page：5 Pages | SEMIKRON 赛米控丹佛斯 | | ||
Pulse Transformers Range of preferred types 文件：188.74 Kbytes Page：5 Pages | SEMIKRON 赛米控丹佛斯 | | ||
Pulse Transformers Range of preferred types 文件：188.74 Kbytes Page：5 Pages | SEMIKRON 赛米控丹佛斯 | |
EN25B10产品属性
- 类型
描述
- 型号
EN25B10
- 制造商
EON
- 制造商全称
Eon Silicon Solution Inc.
- 功能描述
1 Mbit Serial Flash Memory with Boot and Parameter Sectors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XTW |
26+ |
QFN |
28423 |
绝对原厂支持只做自己现货优势 |
|||
EON |
2023+ |
SOP-8 |
6895 |
原厂全新正品旗舰店优势现货 |
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