EMI 滤波器，4 沟道，带集成式 ESD 保护

The EMI7204MU, EMI7206MU and EMI7208MU comprise a family of LC EMI filters with integrated ESD protection. Their typical component values of L = 17 nH and C = 12 pF deliver a cutoff frequency of 250 MHz and stop band attenuation greater than -23 dB from 800 MHz to 6.0 GHz.This performance makes the • ±16 kV ESD Protection on Each Channel (IEC6100042 Level 4, Contact Discharge)\n• L/C Values of 17 nH and 12 pF Deliver Exceptional S21 Performance Characteristics of 250 MHz f3dB and -23 dB Stop Band Attenuation from 800 MHz to 6.0 GHz \n• Integrated EMI/ESD System Solution in UDFN Package Offers ;

Four-Six-Eight -Channel EMI Filter with Integrated ESD Protection

文件：187.59 Kbytes Page：7 Pages

Four-Six-Eight -Channel EMI Filter with Integrated ESD Protection

文件：187.59 Kbytes Page：7 Pages

封装/外壳：8-UFDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FILTER LC(PI) 17NH/12PF ESD SMD 滤波器 EMI/RFI 滤波器（LC，RC 网络）

HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY

CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9

DESCRIPTION: The IDT7203/7204/7205/7206/7207/7208 are dual-port memory buffers with internal pointers that load and empty data on a first-in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

ETHERNET DC/DC CONVERTERS

[Valor Electronics, Inc.]

2,4,6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER