| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：G35N02；N-Channel Enhancement Mode Power MOSFET Description The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | ||
丝印代码：G35N02；N-Channel Enhancement Mode Power MOSFET Description The G35N02S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
25V N-Channel Enhancement-Mode MOSFET 文件：101.84 Kbytes Page：2 Pages | FCI 富加宜 | |
EMF35N02J芯片相关品牌
EMF35N02J规格书下载地址
EMF35N02J参数引脚图相关
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DdatasheetPDF页码索引
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