N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 50mΩ ID 7A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N-CHANNEL MOSFET in a TO-220 Plastic Package

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