型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:EMB1428Q;EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

TI

德州仪器

丝印代码:EMB1428Q;EMB1428Q Switch Matrix Gate Driver

1FEATURES 2• 60V Maximum Stack Operating Voltage • Twelve (12) Floating Gate Drivers • SPI Bus Interface (for Charge/discharge Commands and Fault Reporting) • Low Power Sleep Mode • EMB1428Q is an Automotive Grade Product that is AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Juncti

TI

德州仪器

封装/外壳:48-WFQFN 裸露焊盘 功能:电池平衡器 包装:卷带(TR) 描述:IC BATT BAL LI-ION 1-7C 48WQFN 集成电路(IC) 电池管理

TI

德州仪器

Switch Matrix Gate Driver

文件:863.28 Kbytes Page:29 Pages

TI

德州仪器

Switch Matrix Gate Driver

文件:863.28 Kbytes Page:29 Pages

TI

德州仪器

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transi

NEC

瑞萨

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transi

NEC

瑞萨

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE

DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transi

NEC

瑞萨

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件:81.03 Kbytes Page:6 Pages

TELCOM

1.2A DUAL HIGH-SPEED MOSFET DRIVERS

文件:81.03 Kbytes Page:6 Pages

TELCOM

EMB1428QSQE产品属性

  • 类型

    描述

  • 型号

    EMB1428QSQE

  • 制造商

    Texas Instruments

  • 功能描述

    MOSFET GATE DRIVER - Tape and Reel

更新时间:2026-3-14 12:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NS/国半
2026+
QFN
54658
百分百原装现货 实单必成
TI/
24+
WQFN48
5000
全新原装正品,现货销售
TI
22+
20000
公司只有原装 品质保证
TI/德州仪器
21+
NA
12820
只做原装,质量保证
TI
24+
WQFN48
8000
新到现货,只做全新原装正品
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
TI/德州仪器
2517+
WQFN-48
8850
只做原装正品现货或订货假一赔十!
TI/德州仪器
25+
原厂封装
10280
TI/德州仪器
24+
WQFN-48
9600
原装现货,优势供应,支持实单!
TI
20+
48-WQFN
53650
TI原装主营-可开原型号增税票

EMB1428QSQE数据表相关新闻