EMB1412MY价格

参考价格:¥4.7152

型号:EMB1412MYE/NOPB 品牌:Texas 备注:这里有EMB1412MY多少钱,2025年最近7天走势,今日出价,今日竞价,EMB1412MY批发/采购报价,EMB1412MY行情走势销售排行榜,EMB1412MY报价。
型号 功能描述 生产厂家 企业 LOGO 操作

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

EMB1412 MOSFET Gate Driver

1 Features 1• Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7 A Sink/3 A Source Current • Fast Propagation Times (25 ns Typical) • Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load) • Inverting and Non-Inverting Inputs Provide Either Configuration with a

TI

德州仪器

MOSFET Gate Driver

文件:767.08 Kbytes Page:15 Pages

TI

德州仪器

封装/外壳:8-PowerTSSOP,8-MSOP(0.118",3.00mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC GATE DRVR LOW-SIDE 8MSOP 集成电路(IC) 栅极驱动器

TI

德州仪器

MOSFET Gate Driver

文件:767.08 Kbytes Page:15 Pages

TI

德州仪器

封装/外壳:8-PowerTSSOP,8-MSOP(0.118",3.00mm 宽) 包装:管件 描述:IC GATE DRVR LOW-SIDE 8MSOP 集成电路(IC) 栅极驱动器

TI

德州仪器

MOSFET Gate Driver

文件:767.08 Kbytes Page:15 Pages

TI

德州仪器

MOSFET Gate Driver

文件:767.08 Kbytes Page:15 Pages

TI

德州仪器

Decade Capacitor

Features: • Verification and calibration of LCR meters • Capacitance measurement functions • Verification and calibration of multimeters • 50 pF to > 1 μF • Better than 1 pF resolution • Accuracy of ± (0.5 + 5 pF) • Low loss, leakage, dielectric absorption DESCRIPTION For decades of polys

IET

Continuous Hinge with Clamps, Type 12

APPLICATION This easy-to-open, continuous hinge enclosure features screwdown clamps for secure closure and can be used in a wide variety of applications.

HOFFMANPRODUCTS

Continuous Hinge with Clamps, Type 4

APPLICATION A continuous hinge combined with stainless steel clamps on three sides provide environmental protection and security in indoor or outdoor applications.

HOFFMANPRODUCTS

Premier Supplier of Electronic Hardware

文件:5.0379 Mbytes Page:60 Pages

ABBATRON

Continuous Hinge with Clamps, Type 4

文件:603.13 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

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EMB1412MY产品属性

  • 类型

    描述

  • 型号

    EMB1412MY

  • 制造商

    Texas Instruments

  • 功能描述

    - Tape and Reel

更新时间:2025-12-28 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NS/国半
22+
QFN
100000
代理渠道/只做原装/可含税
TI
QFN
6688
17
现货库存
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
TI(德州仪器)
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
NS/美国国半
25+
QFN
54658
百分百原装现货 实单必成
NS/国半
21+
QFN
2000
百域芯优势 实单必成 可开13点增值税发票
TI/德州仪器
20+
NA
53650
TI原装主营-可开原型号增税票
ADI/亚德诺
23+
DIP28
69820
终端可以免费供样,支持BOM配单!
NS/国半
23+
LLP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
Texas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

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