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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 12mΩ ID 25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 12mΩ ID 12A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11.5mΩ ID 25A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11.5mΩ ID 18.5A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 11.5mΩ ID 9A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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Power MOSFETs-N Channel

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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Power MOSFETs-N Channel

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Power MOSFETs-N Channel

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OptiMOS Buck converter series

Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

INFINEON

英飞凌

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS Buck converter series

Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

INFINEON

英飞凌

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

EMB12N03产品属性

  • 类型

    描述

  • Channel:

    Single N

  • BVDSS(V):

    30

  • VGS(±V):

    20

  • ID(A):

    25

  • RDS(ON)(10V) Max.(mΩ):

    11.5

  • RDS(ON)(5V) Max.(mΩ):

     

  • RDS(ON)(4.5V) Max.(mΩ):

    23

  • RDS(ON)(2.5V) Max.(mΩ):

     

  • Qg(10V)Typ.(nC):

    15.2

  • CissTyp.(pF):

    762

更新时间:2026-5-23 20:00:00
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