| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 80A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 |   | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 80A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 75A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 75A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 26A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs -Low Voltage MOSFET(20V~30V) | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs-N Channel | EXCELLIANCE 杰力科技 | | ||
Power MOSFETs-N Channel | EXCELLIANCE 杰力科技 | | ||
丝印代码：06N03LA；OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated | INFINEON 英飞凌 | | ||
OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel, logic level • Excellent gate charge x RDS(on)product (FOM) • Superior thermal resistance • 175 °C operating temperature | INFINEON 英飞凌 | | ||
丝印代码：06N03LA；OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated | INFINEON 英飞凌 | | ||
丝印代码：06N03LA；OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated | INFINEON 英飞凌 | | ||
丝印代码：06N03L；OptiMOS Buck converter series 文件：158.16 Kbytes Page：8 Pages | INFINEON 英飞凌 | |
EMB06N03产品属性
- 类型
描述
- Channel：
Single N
- BVDSS(V)：
30
- VGS(±V)：
20
- ID(A)：
80
- RDS(ON)(10V) Max.(mΩ)：
6
- RDS(ON)(5V) Max.(mΩ)：
- RDS(ON)(4.5V) Max.(mΩ)：
9.5
- RDS(ON)(2.5V) Max.(mΩ)：
- Qg(10V)Typ.(nC)：
34.6
- CissTyp.(pF)：
1983
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EMC |
24+ |
DFN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EMC |
2026+ |
DFN |
2024 |
原装正品 假一罚十! |
|||
EMC/杰力 |
2511 |
EDFN5X6 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
EMC/杰力 |
25+ |
DFN56-8 |
20300 |
EMC/杰力原装特价EMB06N03HR即刻询购立享优惠#长期有货 |
|||
EMC |
25+ |
EDFN-56 |
200 |
全新原装正品支持含税 |
|||
EMC杰力 |
24+ |
N/A |
12980 |
原装正品现货支持实单 |
|||
EMC |
21+ |
SOP |
1625 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
EMC |
22+ |
SOP |
20000 |
公司只有原装 品质保证 |
|||
EMC/杰力 |
25+ |
EDFN56 |
880000 |
明嘉莱只做原装正品现货 |
|||
EMC/杰力 |
2450+ |
QFN |
6540 |
只做原厂原装正品终端客户免费申请样品 |
EMB06N03规格书下载地址
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DdatasheetPDF页码索引
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