N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating

Power MOSFETs-N Channel

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 6mΩ ID 18A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

丝印代码：06N03LA；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel, logic level • Excellent gate charge x RDS(on)product (FOM) • Superior thermal resistance • 175 °C operating temperature

丝印代码：06N03LA；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

丝印代码：06N03LA；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

丝印代码：06N03L；OptiMOS Buck converter series

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