封装/外壳：48-VFQFN 裸露焊盘 包装：托盘 描述：IC RF TXRX+MCU 802.15.4 48VFQFN RF/IF，射频/中频和 RFID 射频收发器 IC

封装/外壳：48-VFQFN 裸露焊盘 包装：卷带（TR） 描述：IC RF TXRX+MCU 802.15.4 48VFQFN RF/IF，射频/中频和 RFID 射频收发器 IC

High-Performance, Integrated Dual ZigBee PRO

文件：1.52046 Mbytes Page：142 Pages

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM346 consists of four independent, high gain, internally compensated, low power programmable amplifiers. Two external resistors (Rset) allow the user to program the gain-bandwith product, slew rate, supply current, input bias current, input offset current and input noise. For exa

PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS

DESCRIPTION The LM346 consists of four independent, high gain, internally compensated, low power programmable amplifiers. Two external resistors (Rset) allow the user to program the gain-bandwith product, slew rate, supply current, input bias current, input offset current and input noise. For exa

Programmable Quad Operational Amplifiers

文件：727.78 Kbytes Page：17 Pages

Programmable Quad Operational Amplifiers

文件：727.78 Kbytes Page：17 Pages