1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

1 Megabit (128K x 8) Serial Flash Memory

General Description The EM25LV010 is a 1 M bits Flash memory organized as 128K x 8 bits and uses a single voltage of 2.7-3.6V for Program and Erase. It features a typical 2ms Page-Program time and a typical 40ms Block-Erase time. The device uses status register to detect the completion of the Pro

512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory With 25 MHz SPI Bus Interface

GENERAL DESCRIPTION The Pm25LV512/010 are 512 Kbit/1 Mbits 3.0 Volt-only serial Flash memories. These devices are designed to use a single low voltage, range from 2.7 Volt to 3.6 Volt, power supply to perform read, erase and program operations. The devices can be programmed in standard EPROM pr

512 Kbit /1 Mbit / 2 Mbit / 4 Mbit 3.0 Volt-onl Serial Flash Memory With 100 MHz SPI Bus Interface

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