OBD (ISO) to RS232 Interpreter

Description Since the 1996 model year, North American automobiles have been required to provide an OBD (On Board Diagnostics) data port for the connection of test equipment. This port is used to obtain emissions-related diagnostics information, and in some cases can also be used to obtain real-ti

OBD (ISO) to RS232 Interpreter (v2.0)

Since the 1996 model year, North American automobiles have been required to provide an OBD (On Board Diagnostics) data port for the connection of test equipment. This port is used to obtain emissions-related diagnostics information, and in some cases can also be used to obtain real-time vehicle oper ·Low power CMOS design\n·Crystal controlled for accuracy\n·ISO 9141-2 and ISO 14230-4 protocols\n·Configurable with AT commands\n·Standard ASCII character output\n·Four high current LED drive outputs\n;

OBD (ISO) to RS232 Interpreter

文件：97.78 Kbytes Page：19 Pages

OBD (ISO) to RS232 Interpreter

文件：97.78 Kbytes Page：19 Pages

包装：散装 描述：LED ASSY 0.230\ 光电器件 LED - 电路板指示器，阵列，发光条，条形图

发光二极管/LED

MOSFET-单P沟道型

Single P-channel MOSFET

文件：816.36 Kbytes Page：4 Pages

OBD (ISO) to RS232 Interpreter

文件：97.78 Kbytes Page：19 Pages

OBD (ISO) to RS232 Interpreter

文件：97.78 Kbytes Page：19 Pages

DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS

NPN Silicon Darlington Power Transistor ​​​​​​​ TheBU323AP is a monolithic darlington transistor designedfor automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —VCER(sus)= 475 Vdc • 125 Watts Capability at 50 Volts • VCESat Specifie

AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS

NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 dB Min Efficiency = 50 Min • 10

3-Amp, 5-Volt Positive Regulator

文件：203.43 Kbytes Page：8 Pages

3-Amp, 5-Volt Positive Regulator

文件：203.43 Kbytes Page：8 Pages