Low DCR and large current capability, suitable for power circuitry.

HIGH POWER ELJ-PB Series 1812 Case Size Features: • Low DCR and large current capability, suitable for power circuitry • Wire wound, resin molded chip inductor. (PC, PA, PB types) • Capable of being Re-flow or flow soldered • Wide line-up from 1005 to 4532 case sizes • Good for mounting A

Fixed Inductors Chip Inductors

文件：134.28 Kbytes Page：7 Pages

High Power Type PF, PE, PC, PA, PB

文件：236.05 Kbytes Page：7 Pages

High Power Types PF, PE, PC, PA, PB

文件：283.88 Kbytes Page：5 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature