Chip inductors

■ Features ● High Q ● Good for mounting ● Wide allowable range (1.0 nH to 1000 µH) ■ Recommended Applications ● CTV, VTR, HIC, HDD, FDD, Cordless telephones, Portable telephones Pagers, Video cameras

Low DCR and large current capability, suitable for power circuitry.

HIGH POWER ELJ-PB Series 1812 Case Size Features: • Low DCR and large current capability, suitable for power circuitry • Wire wound, resin molded chip inductor. (PC, PA, PB types) • Capable of being Re-flow or flow soldered • Wide line-up from 1005 to 4532 case sizes • Good for mounting A

High Power Types PF, PE, PC, PA, PB

文件：283.88 Kbytes Page：5 Pages

High Power Type PF, PE, PC, PA, PB

文件：236.05 Kbytes Page：7 Pages

Fixed Inductors Chip Inductors

文件：134.28 Kbytes Page：7 Pages

Low DCR and large current capability, suitable for power circuitry.

HIGH POWER ELJ-PB Series 1812 Case Size Features: • Low DCR and large current capability, suitable for power circuitry • Wire wound, resin molded chip inductor. (PC, PA, PB types) • Capable of being Re-flow or flow soldered • Wide line-up from 1005 to 4532 case sizes • Good for mounting A

High Power Type PF, PE, PC, PA, PB

文件：236.05 Kbytes Page：7 Pages

Fixed Inductors Chip Inductors

文件：134.28 Kbytes Page：7 Pages

CD-Interface and Audio Processor(CIAP)

CD-Interface and Audio Processor(CIAP) This technical summary provides a brief description of the MCD221 CD–Interface and Audio Processor. A complete data sheet for the MCD221 is available and can be ordered from your local Motorola sales office. The order number is MCD221/D. The MCD221 has two

CD-Interface and Audio Processor(CIAP)

CD-Interface and Audio Processor(CIAP) This technical summary provides a brief description of the MCD221 CD–Interface and Audio Processor. A complete data sheet for the MCD221 is available and can be ordered from your local Motorola sales office. The order number is MCD221/D. The MCD221 has two

MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications

Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications. Features: • Extremely Low Feedback Capacitance •

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing