Photo Transistor - 16Pin DIP-DC

·Current transfer ratio (CTR: 50~600% at IF =5mA. VCE =5V)\n·High isolation voltage between input and output (Viso=5000 V rms )\n·Creepage distance >7.62 mm\n·Operating temperature up to +110°C\n·Pb free and RoHS compliant;

16 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

文件：1.38195 Mbytes Page：9 Pages

16 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

文件：1.38195 Mbytes Page：9 Pages

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

RF POWER TRANSISTOR NPN SILICON

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