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BC847A价格
参考价格：￥0.0394
型号：BC847A,215 品牌：NXP 备注：这里有BC847A多少钱，2024年最近7天走势，今日出价，今日竞价，BC847A批发/采购报价，BC847A行情走势销售排行榜，BC847A报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BC847A | GeneralPurposeTransistors(NPNSilicon) GeneralPurposeTransistors NPNSilicon Features •Pb−FreePackagesareAvailable •MoistureSensitivityLevel:1 •ESDRating −HumanBodyModel:>4000V −MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
BC847A | NPNgeneralpurposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | |
BC847A | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •EpitaxialDieConstruction •IdeallySuitedforAutomaticInsertion •310mWPowerDissipation •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications | TRSYS Transys Electronics |  | |
BC847A | NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain) NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP) | SIEMENS Siemens Ltd |  | |
BC847A | NPNGeneralPurposeAmplifier Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BC847A | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 |  | |
BC847A | NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie | DIODESDiodes Incorporated 达尔科技 | | |
BC847A | NPNSmallSignalTransistor310mW Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •PowerDissipation:0.225W(Tamb=25°C)(Note1) •CollectorCurrent:0.1A •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
BC847A | NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
BC847A | GeneralPurposeTransistorNPNSilicon GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V | WEITRONWEITRON 威堂電子科技 |  | |
BC847A | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | ETL E-Tech Electronics LTD |  | |
BC847A | 45V,100mANPNgeneral-purposetransistors DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
BC847A | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable(BC856-BC858) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability | DIODESDiodes Incorporated 达尔科技 | | |
BC847A | 0.2WattsNPNPlastic-EncapsulateTransistors Features ♦Epitaxialplanardieconstruction ♦Surfacedevicetypemounting ♦Moisturesensitivitylevel1 ♦MatteTin(Sn)leadfinishwithNickel(Ni)underplate ♦PbfreeversionandRoHScompliant ♦Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondat | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 |  | |
BC847A | NPNGENERALPURPOSETRANSISTORS FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest | PANJITPANJIT International Inc. 强茂強茂股份有限公司 |  | |
BC847A | 45V,100mANPNgeneral-purposetransistors Generaldescription NPNgeneral-purposetransistorsinsmallplasticpackages. Features ■Lowcurrent ■Lowvoltage ■Threedifferentgainselections Applications ■General-purposeswitchingandamplification | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
BC847A | NPNGeneralPurposeTransistor ■Features ●Ideallysuitedforautomaticinsertion ●ForswitchingandAFamplifierapplications | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
BC847A | NPNgeneralpurposeTransistor FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
BC847A | NPNgeneralpurposeTransistor FEATURES •Highcurrentgain. •ExcellenthFElinearity. •Lownoisebetween30Hzand15kHz. •ForAFinputstagesanddriverapplications. APPLICATIONS •Generalpurposeswitchingandamplification. | PFSShenzhen Ping Sheng Electronics Co., Ltd. 平盛电子深圳市平盛电子有限公司 |  | |
BC847A | GENERALPURPOSETRANSISTORNPNSILICON GeneralPurposeTransistor NPNSilicon | ZOWIEZOWIE 智威智威科技股份有限公司 |  | |
BC847A | SurfacemountSi-EpitaxialPlanarTransistors GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 |  | |
BC847A | SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications | TAITRON TAITRON |  | |
BC847A | BC846A FEATURES •Collectcurrent:0.1A •GeneralPurposeTransistorNPNType •RoHScompliantproduct •OperatingTemp.:-55OC~+150OC | SECOS SeCoS Halbleitertechnologie GmbH |  | |
BC847A | TRANSISTOR(NPN) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 |  | |
BC847A | NPNSILICONPLANAREPITAXIALTRANSISTORS ForuseinDriverStagesofAudioAmplifierinThickandThin-filmHybridCircuits | CDIL CDIL |  | |
BC847A | SMDNPNTransistor GeneralPurposeTransistors NPNSilicon Features •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V,MachineModel:>400V •Epitaxialplanachipconstruction •Idealformediumpowerapplicationandswitching •Ascomplementarytype,thePNPtransistor | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 |  | |
BC847A | GeneralPurposeTransistors GeneralPurposeTransistors NPNSilicon | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 |  | |
BC847A | Plastic-EncapsulateTransistors FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage | OLITECH Olitech Electronics Co.Ltd |  | |
BC847A | NPNSURFACEMOUNTSMALLSIGNALTRANSISTORINSOT23 Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypesAvailable •ForswitchingandAFAmplifier •RoHScompliantpackage | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 |  | |
BC847A | SmallSignalTransistors(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistors forswitchingandAFamplifierapplications. ♦Especiallysuitedforautomaticinsertionin thick-andthin-filmcircuits. ♦Thesetransistorsaresubdividedintothree groupsA,BandCaccordingtotheircurrentgain.The typ | GE GE Industrial Company |  | |
BC847A | EpoxymeetsUL-94V-0flammabilityrating NPNSiliconEpitaxialTransistor forswitchingandamplifierapplications | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | |
BC847A | Plastic-EncapsulateTransistors FEATURES ForgeneralAFapplications Highcollectorcurrent Highcurrentgain Lowcollector-emittersaturationvoltage | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 |  | |
BC847A | Ideallysuitedforautomaticinsertion FEATURE Ideallysuitedforautomaticinsertion ForSwitchingandAFAmplifierApplications | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 |  | |
BC847A | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 45V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd |  | |
BC847A | 45V,100mANPNgeneral-purposetransistors 文件：104.72 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BC847A | NPNPlastic-EncapsulateTransistors 文件：1.35798 Mbytes Page：5 Pages | JINGHENG Jinan Jing Heng Electronics Co., Ltd. |  | |
BC847A | Ideallysuitedforautomaticinsertion 文件：450.11 Kbytes Page：6 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 |  | |
BC847A | SMDGeneralPurposeNPNTransistors 文件：144.84 Kbytes Page：2 Pages | DiotecDIOTEC 德欧泰克 | | |
BC847A | NPNgeneralpurposeTransistor 文件：2.06563 Mbytes Page：4 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
BC847A | 45V,100mANPNgeneral-purposetransistors 文件：131.51 Kbytes Page：18 Pages | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | |
BC847A | NPNTransistors 文件：704.82 Kbytes Page：4 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | |
BC847A | NPNPlastic-EncapsulateTransistors 文件：468.75 Kbytes Page：4 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
BC847A | NPNSiliconPlanarEpitaxialTransistors 文件：146.06 Kbytes Page：1 Pages | FCI Amphenol ICC |  | |
BC847A | NPNTransistors 文件：1.66599 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
BC847A | NPNSmallSignalTransistor 文件：218.99 Kbytes Page：5 Pages | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | | |
BC847A | NPNgeneralpurposeTransistor 文件：220 Kbytes Page：6 Pages | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | |
BC847A | 45V,100mANPNgeneral-purposetransistors 文件：104.72 Kbytes Page：15 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BC847A | NPNPlastic-EncapsulateTransistors 文件：226.31 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | | |
BC847A | SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) 文件：456.41 Kbytes Page：2 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | | |
BC847A | NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR 文件：452.66 Kbytes Page：4 Pages | DIODESDiodes Incorporated 达尔科技 | | |
BC847A | SURFACEMOUNTNPNSILICONTRANSISTOR 文件：345.56 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
BC847A | NPNSiliconAFTransistors 文件：183.85 Kbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •BVCEO>45V •IC=100mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryPNPType:MMBT3906T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualifie | DIODESDiodes Incorporated 达尔科技 | | | |
NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •ComplementaryPNPTypes:BC856–BC858 •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101StandardsforH | DIODESDiodes Incorporated 达尔科技 | | | |
Plastic-EncapsulateTransistors FEATURES Twotransistorsinonepackage Reducesnumberofcomponentsandboardspace Nomutualinterferencebetweenthetransistors | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | | | |
ForAFinputstagesanddriverapplications NPNSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC857...-BC860...(PNP) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES •PowerdissipationcomparabletoSOT23 •Lowcurrent(max.100mA) •Lowvoltage(max.65V). APPLICATIONS •Generalpurposeswitching | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
SmallSignalTransistor Features -PowerdissipationPCM:0.20W(@TA=25°C) -CollectorcurrentICM:0.1A -Collector-basevoltageVCBO:BC846=80VBC847=50VBC848=30V -Operatingandstoragejunctiontemperaturerange:TJ,TSTG=-65to+150°C | COMCHIPComchip Technology 典琦典琦科技股份有限公司 |  | | |
GENERALPURPOSETRANSISTORSNPNSILICON DESCRIPTION The BC846AL/BLA847848AL/CLare availableinSOT23package. FEATURES ⚫Highcurrentgain ⚫ExcellenthFElinearity ⚫Lownoisebetween30Hzand15kHz ⚫ForAFinputstagesanddriverapplications ⚫AvailableinSOT23package APPLICATIONS ⚫Ge | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 |  | | |
CASE318-08,STYLE6SOT-23(TO-236AB) GeneralPurposeTransistors NPNSilicon | MotorolaMotorola, Inc 摩托罗拉 |  | |
BC847A产品属性
- 类型
描述
- 型号
BC847A
- 功能描述
两极晶体管 - BJT Transistor 200mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
SOT-23 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
ON/安森美 |
SOT-23 |
240852 |
1624 |
只做原装正品,现货 |
|||
ON/安森美 |
20+原装正品 |
SOT23 |
6000 |
大量现货,免费发样。 |
|||
ON/安森美 |
21+ |
SOT-23-3 |
60000 |
绝对原装正品现货,假一罚十 |
|||
ON/安森美 |
23+ |
SOT-23-3 |
120618 |
进口原装现货 |
|||
DIODES/美台 |
21+ |
NA |
9940 |
全新原装现货 |
|||
Micro Commercial Co |
23+ |
SOT-523 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
NXP/恩智浦 |
21+ |
SOT323 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
NXP(恩智浦) |
22+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ONSEMI |
24+ |
原厂封装 |
2400 |
原装正品现货,假一赔十 |
BC847A芯片相关品牌
BC847A规格书下载地址
BC847A参数引脚图相关
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- BC847CS
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- BC846S,125
- BC846S,115
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- BC846PNH6327
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- BC846DS
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- BC846C
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- BC846BT
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- BC846BQ
- BC846BP
- BC846BM
BC847A数据表相关新闻
BC847BVN,115 NXP/恩智浦 21+ SOT-666
https://hfx03.114ic.com/
2022-2-16BC846ALT1G
製造商:ONSemiconductor 產品類型:雙極結晶體管-BJT RoHS:詳細資料 安裝風格:SMD/SMT 封裝/外殼:SOT-23-3 晶體管極性:NPN 配置:Single 集電極-發射極最大電壓VCEO:65V 集電極-基極電壓VCBO:80V 發射機-基極電壓VEBO:6V 集電極-發射極飽和電壓:0.6V 集電極最大直流電流:0.1A P
2020-10-21BC818-40LT1G
BC818-40LT1G
2020-10-12BC847CWT1G原装正品ON安森美
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-10-4BC847BVC-7
BC847BVC-7
2019-12-7BC846BPDW1T1G顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
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