8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR

Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

Strobed hex inverter/buffer

The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability.

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half