EL4502价格
参考价格：￥2.5904
型号：EL4502S(TA) 品牌：Everlight Electronics 备注：这里有EL4502多少钱，2026年最近7天走势，今日出价，今日竞价，EL4502批发/采购报价，EL4502行情走势销售排行榜，EL4502报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EL4502 | 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 |   | |
EL4502 | 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | |
EL4502 | High Speed Photocoupler | EVERLIGHT 台湾亿光 | | |
EL4502 | 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 文件：881.27 Kbytes Page：13 Pages | EVERLIGHT 台湾亿光 | | |
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR Description The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over con | EVERLIGHT 台湾亿光 | | ||
Strobed hex inverter/buffer The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability. | PHILIPS 飞利浦 | | ||
Strobed hex inverter/buffer The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability. | PHILIPS 飞利浦 | | ||
Strobed hex inverter/buffer The HEF4502B consists of six inverter/buffers with 3-state outputs. When the output enable input (EO) is HIGH all six outputs (O1to O6) are in the high impedance OFF-state. When the enable input (E) is HIGH all six outputs are switched to LOW. The outputs have a 2-TTL load drive capability. | PHILIPS 飞利浦 | | ||
POWER TRANSISTORS(30A,100V,200W) 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS | MOSPEC 统懋 | | ||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half | PANASONIC 松下 | |
EL4502产品属性
- 类型
描述
- Function：
High Speed
- Number of Channels：
1
- Dimension (mm)：
9.76x6.6x3.5
- Supply Voltage(V)：
30
- CTR (%)：
19~50
- Topr (Min)(degC)：
-55
- Topr (Max)(degC)：
100
- Viso (Vrms)：
5000
- Data Transfer Rate (Mbps)：
1
- tPHL (ns)：
1000
- tPLH (ns)：
1000
- CMR (V/us)：
1000
- IO [mA]：
8
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ELEVERLIG |
2026+ |
DIP8 |
3000 |
原装正品 假一罚十! |
|||
EVERLIGHT/亿光 |
25+ |
DIPSOP8 |
20000 |
全新原装正品支持含税 |
|||
EVERLIGHT |
25+23+ |
DIP-8 |
29390 |
绝对原装正品全新进口深圳现货 |
|||
EVERLIGHT |
18+ |
DIP8 |
3015 |
全新 发货1-2天 |
|||
EVERLIGHT/亿光 |
2023+ |
DIP8 |
8863 |
专注全新正品,优势现货供应 |
|||
EVERLIGHT/亿光 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
EVERLIGHT |
12+ |
DIP8 |
8863 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
EVERLIGHT/亿光 |
2223+ |
DIP8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
EVERLIGHT/亿光 |
25+ |
DIP8 |
90000 |
全新原装现货 |
|||
EVERLIGHT |
23+ |
DIP8 |
12314 |
全新原装正品现货,支持订货 |
EL4502规格书下载地址
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