Low-Power 100MHz Gain-of-2 Stable Operational Amplifier

The EL2045 is a high speed, low power, low cost monolithic operational amplifier built on Elantecs proprietary complementary bipolar process. The EL2045 is gain-of-2 stable and features a 275V/µs slew rate and 100MHz gain bandwidth at gain-of-2 while requiring only 5.2mA of supply current. The po

Low-Power 100MHz Gain-of-2 Stable Operational Amplifier

文件：687.95 Kbytes Page：10 Pages

Low-Power 100MHz Gain-of-2 Stable Operational Amplifier

The EL2045 is a high speed, low power, low cost monolithic operational amplifier built on Elantecs proprietary complementary bipolar process. The EL2045 is gain-of-2 stable and features a 275V/µs slew rate and 100MHz gain bandwidth at gain-of-2 while requiring only 5.2mA of supply current. The po

Low-Power 100MHz Gain-of-2 Stable Operational Amplifier

The EL2045 is a high speed, low power, low cost monolithic operational amplifier built on Elantecs proprietary complementary bipolar process. The EL2045 is gain-of-2 stable and features a 275V/µs slew rate and 100MHz gain bandwidth at gain-of-2 while requiring only 5.2mA of supply current. The po

Low-Power 100MHz Gain-of-2 Stable Operational Amplifier

文件：687.95 Kbytes Page：10 Pages

Low-Power 100MHz Gain-of-2 Stable Operational Amplifier

文件：687.95 Kbytes Page：10 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside el

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

SWITCHMODE?? Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • E

SWITCHMODE??Schottky Power Rectifirer

SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara