10.70-11.70GHz 4-Watt Internally-Matched Power FET

FEATURES • 10.70 –11.70GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.0 dBm Output Power at 1dB Compression • 6.5 dB Power Gain at 1dB Compression • 30 Power Added Efficiency • -46 dBc IM3 at Po = 25.5 dBm SCL • 100 Tested for DC, RF, and RTH

10.70-11.70GHz 4-Watt Internally-Matched Power FET

10.70-11.70GHz 4-Watt Internally-Matched Power FET

FEATURES\n• 10.70 –11.70GHz Bandwidth\n• Input/Output Impedance Matched to 50 Ohms\n• +36.0 dBm Output Power at 1dB Compression\n• 6.5 dB Power Gain at 1dB Compression\n• 30% Power Added Efficiency\n• -46 dBc IM3 at Po = 25.5 dBm SCL\n• 100% Tested for DC, RF, and RTH • 10.70 –11.70GHz Bandwidth\n• Input/Output Impedance Matched to 50 Ohms\n• +36.0 dBm Output Power at 1dB Compression\n• 6.5 dB Power Gain at 1dB Compression\n• 30% Power Added Efficiency\n• -46 dBc IM3 at Po = 25.5 dBm SCL\n• 100% Tested for DC, RF, and RTH;

X, Ku-Band Internally Matched FET

DESCRIPTION The FLM1011-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power

4W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

10.7-11.7GHz Multi-Stage Power Amplifier

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