MULTILAYER CERAMIC CHIP CAPACITORS

C Series General (Up to 50V) Features • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and reliability. • Low ESL and excellent frequency

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1812E is a variable capacitance diode designed for UHF applications. The KV1812E is available in a very small URD Surface Mount Package. FEATURES ■ Very Small URD Surface Mount Package ■ Very Low Operating Voltage (1 to 8 V) ■ Large Capacitance Ratio (A = 7.4) ■ Excellent

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1812K is a variable capacitance diode designed for UHF applications. The KV1812K is available in a very small UFD Surface Mount Package. FEATURES ■ Very Small UFD Surface Mount Package ■ Very Low Operating Voltage (1 to 8 V) ■ Large Capacitance Ratio (A = 7.4) ■ Excellent

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1812K is a variable capacitance diode designed for UHF applications. The KV1812K is available in a very small UFD Surface Mount Package. FEATURES ■ Very Small UFD Surface Mount Package ■ Very Low Operating Voltage (1 to 8 V) ■ Large Capacitance Ratio (A = 7.4) ■ Excellent

Integrated Circuit Capstan Interface Circuit for VCR

Description: The NTE1812 is an integrated circuit in a 20–Lead DIP type package designed for VCR capstan interface. Features: • The Functions Consist of: FG Amplifier 2H/4H/6H Automatic Detector FG Divider Gain Automatic Change Circuit • Supply Voltage: 5V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri