双通道驱动芯片

EG3003 是一款高性价比的双通道大功率 MOS 管、IGBT 管栅极驱动专用芯片，内部集成了逻辑信号输入处理电路、死区时控制电路、欠压关断电路、闭锁电路、输出驱动电路，用于电机控制器、电源、变压器中的驱动电路。电源电压范围 11V - 20V，静态功耗小于 100uA，具有闭锁功能防止输出功率管同时导通，输入通道 INA 内建了一个 200K 下拉电阻，INB 内建了上拉 5V 高电位，在输入悬空时使功率 MOS 管处于关闭状态，输出电流能力 10+/-1/1.5A，采用 SOP8 封装。 • 源出峰值驱动电流达 1A 和吸入峰值驱动电流达 1.5A\n• 电压输入范围 11V - 20V\n• 具有 VCC 欠压保护\n• 内建死区控制电路\n• 自带闭锁功能\n• INA 输入通道高电平有效\n• INB 输入通道低电平有效\n• 封装形式：SOP - 8;

30A HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Ultra-Fast Switching ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

30A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Super-Fast Switching for High Efficiency ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. FEATURES AND BENEFITS ■ COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ■ UL