带SD功能600V驱动芯片

EG2104M 是一款高性价比的带 SD 功能的 MOS 管、IGBT 管栅极驱动专用芯片，内部集成了逻辑信号输入处理电路、死区时控制电路、电平位移电路、脉冲滤波电路及输出驱动电路，专用于无刷电机控制器、电源 DC - DC 中的驱动电路。高端工作电压可达 600V，低端 Vcc 的电源电压范围宽 10V - 20V。该芯片输入通道 IN 内建了一个 200K 下拉电阻，SD 内建了一个 200K 下拉电阻，在输入悬空时使上、下功率 MOS 管处于关闭状态，输出电流能力为 IO+/-0.3/0.6A，采用 SOP8 封装。 • 高端悬浮自举电源设计，耐压可达 600V\n• 适应 5V、3.3V 输入电压\n• 最高频率支持 500KHZ\n• VCC 和 VB 端电源带欠压保护\n• 低端 VCC 电压范围 10V - 20V\n• 输出电流能力 IO+/- 0.3A/0.6A\n• 内建死区控制电路\n• SD 输入通道低电平有效，关闭 HO、LO 输出\n• 外围器件少\n• 封装形式：SOP8\n• 无铅无卤符合 ROHS 标准;

MOS diode drive chip

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256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr

256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m

3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM)

TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios.

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in