Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +36.5dBm TYPICAL OUTPUT POWER • 16.0dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED

Low Distortion GaAs Power FET

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Low Distortion GaAs Power FET

ZENER DIODES

• 1N962BUR-1 thru 1N986BUR-1 AVAILABLE IN JAN,JANTX AND JANTXV PER MIL-PRF-19500/117 • ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED

4.0 INCH (101.6 MM) SINGLE DIGIT STICK DISPLAY

4.0 INCH (101.6 MM) SINGLE DIGIT STICK DISPLAY

TMOS Switching

TMOS Switching N–Channel — Enhancement

Integrated Circuit 3-Terminal Positive Voltage Regulator, 5V

The NTE960 fixed–voltage regulator is a monolithic integrated circuit in a TO220 type package designed for use in a wide variety of applications including local, on–card regulation. This regulator employs internal current limiting, thermal shutdown, and safe–area compensation. With adequate heat s

N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODE

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