Low Distortion GaAs Power FET

FEATURES • +28.0dBm TYPICAL OUTPUT POWER • 19.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 30mA PER BIN RANGE

Low Distortion GaAs Power FET

[Excelics] Features • LOW COST SURFACE-MOUNT PLASTIC PACKAGE • +28.0dBm TYPICAL OUTPUT POWER • 14.0dB TYPICAL POWER GAIN AT 2GHz • 0.7dB TYPICAL NOISE FIGURE AT 2GHz • +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz • 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY-PRESS IN

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Precision Wirewound Resistors

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Temperature Sensors Line Guide

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