Slot-type Photomicrosensor (Non-modulated)

Global Standard Slot-type photomicrosensors with 50- to 100-mA direct switching capacity. • Series includes models that enable switching between dark-ON and light-ON operation. • Response frequency as high as 1 kHz. • Easy operation monitoring with bright light indicator. • Wide operating volt

封装/外壳：模块，预接线 包装：散装 描述：SENSOR OPT SLOT NPN MODULE 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 晶体管输出

Slot-type Photomicrosensor (Non-modulated)

文件：470.47 Kbytes Page：9 Pages

Photomicrosensor with 50- to 100-mA direct switching capacity for built-in application.

文件：1.56654 Mbytes Page：13 Pages

Slot-type Photomicrosensor (Non-modulated)

Global Standard Slot-type photomicrosensors with 50- to 100-mA direct switching capacity. • Series includes models that enable switching between dark-ON and light-ON operation. • Response frequency as high as 1 kHz. • Easy operation monitoring with bright light indicator. • Wide operating volt

Slot-type Photomicrosensor (Non-modulated)

文件：470.47 Kbytes Page：9 Pages

Slot-type Photomicrosensor (Non-modulated)

文件：470.47 Kbytes Page：9 Pages

封装/外壳：模块，连接器，槽型 包装：袋 描述：SENSOR OPTICAL 5MM MOD SLOT TYPE 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

Slot-type Photomicrosensor (Non-modulated)

文件：470.47 Kbytes Page：9 Pages

Slot-type Photomicrosensor (Non-modulated)

文件：470.47 Kbytes Page：9 Pages

凹槽接插件式/导线引出型（直流光）*1

Slot-type Photomicrosensor (Non-modulated)

文件：470.47 Kbytes Page：9 Pages

槽型光电开关(光电晶体管输出)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

Plastic Medium-Power Silicon NPN Darlingtons

Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Multi TOPLED Cathodes On One Side

Features ● P-LCC-4 package ● color of package: white ● for use as optical indicator ● for backlighting, optical coupling into light pipes and lenses ● both chips can be controlled separately ● high signal efficiency possible by color change of the LED ● with appropriate controlling it is po